Beschreibung
Light emitting InGaN/GaN quantum wells were studied with the help of confocal micro photoluminescence microscopy. The focus is put on charge carrier dynamics in the quantum wells. Recombination rates of different recombination mechanisms are investigated, especially considering the efficiency loss of InGaN based light emitting diodes at high charge carrier densities, known as droop. This is done with the help of the so called ABC model and measurements of the charge carrier density dependent recombination. An expansion of the ABC model beyond Maxwell-Boltzmann statistics is also discussed to include high charge carrier density effects. Additionally, lateral charge carrier motion in the quantum well is directly observed and analyzed, both at room temperature and at 15 K.
